2003. 12. 12 1/4 semiconductor technical data 2N3904V epitaxial planar npn transistor revision no : 0 general purpose application. switching application. features low leakage current : i cex =50na(max.), i bl =50na(max.) @v ce =30v, v eb =3v. excellent dc current gain linearity. low saturation voltage : v ce(sat) =0.3v(max.) @i c =50ma, i b =5ma. low collector output capacitance : c ob =4pf(max.) @v cb =5v. complementary to 2n3906v. maximum rating (ta=25 ) dim millimeters a b d e vsm 1.2 0.05 0.8 0.05 0.5 0.05 0.3 0.05 1.2 0.05 0.8 0.05 0.40 0.12 0.05 c g h j k 0.2 0.05 b e d g a h k c j 2 3 1 p p p 5 1. emitter 2. base 3. collector + _ + _ + _ + _ + _ + _ + _ + _ characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6 v collector current i c 200 ma base current i b 50 ma collector power dissipation p c * 100 mw junction temperature t j 150 storage temperature range t stg -55 150 type name marking z c
2003. 12. 12 2/4 revision no : 0 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cex v ce =30v, v eb =3v - - 50 na base cut-off current i bl v ce =30v, v eb =3v - - 50 na collector-base breakdown voltage v (br)cbo i c =10 a, i e =0 60 - - v collector-emitter breakdown voltage * v (br)ceo i c =1ma, i b =0 40 - - v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6.0 - - v dc current gain * h fe (1) v ce =1v, i c =0.1ma 40 - - h fe (2) v ce =1v, i c =1ma 70 - - h fe (3) v ce =1v, i c =10ma 100 - 300 h fe (4) v ce =1v, i c =50ma 60 - - h fe (5) v ce =1v, i c =100ma 30 - - collector-emitter saturation voltage * v ce(sat) 1 i c =10ma, i b =1ma - - 0.2 v v ce(sat) 2 i c =50ma, i b =5ma - - 0.3 base-emitter saturation voltage * v be(sat) 1 i c =10ma, i b =1ma 0.65 - 0.85 v v be(sat) 2 i c =50ma, i b =5ma - - 0.95 transition frequency f t v ce =20v, i c =10ma, f=100mhz 300 - - mhz collector output capacitance c ob v cb =5v, i e =0, f=1mhz - - 4.0 pf input capacitance c ib v be =0.5v, i c =0, f=1mhz - - 8.0 pf input impedance h ie v ce =10v, i c =1ma, f=1khz 1.0 - 10 k voltage feedback ratio h re 0.5 - 8.0 x10 -4 small-signal current gain h fe 100 - 400 collector output admittance h oe 1.0 - 40 noise figure nf v ce =5v, i c =0.1ma rg=1k , f=10hz 15.7khz - - 5.0 db switching time delay time t d v out total< 4pf c 10k ? 275 ? v =3.0v cc 300ns -0.5v 10.9v 0 t ,t < 1ns, du=2% r in v f - - 35 ns rise time t r - - 35 storage time t stg 20 s 1n916 or equiv. 10.9v -9.1v v out total< 4pf c v =3.0v cc 275 ? 10k ? v in 0 t ,t < 1ns, du=2% rf - - 200 fall time t f - - 50 2N3904V * pulse test : pulse width 300 s, duty cycle 2%.
2003. 12. 12 3/4 2N3904V revision no : 0 c 0 collector current i (ma) collector current i (ma) 0 c 0 base-emitter voltage v (v) be be c i - v 10 dc current gain h fe 3 1 0.3 0.1 collector current i (ma) c 0 collector-emitter voltage v (v) ce ce c i - v h - i c collector current i (ma) collector-emitter saturation ce(sat) v - i base-emitter saturation collector current i (ma) c be(sat) v - i 1234 20 40 60 80 100 common emitter ta=25 c 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 i =0.1ma b 0.4 0.8 1.2 1.6 40 80 120 160 200 ta=12 5 c ta=25 c ta=-55 c common emitter v =1v ce fe c 10 30 100 300 30 50 100 300 500 1k common emitter v =1v ce ta=125 c ta=25 c ta=-55 c ce(sat) c voltage v (v) common emitter 0.01 0.1 0.3 1 0.1 0.03 0.05 0.3 0.5 1 31030100 i /i =10 c 300 b ta=125 c ta=25 c ta=-55 c be(sat) c voltage v (v) 3 ta=125 c 0.3 0.1 0.1 1 0.5 0.3 1 3 10 ta=25 c ta=-55 c 30 100 300 common emitter i /i =10 5 10 ce
2003. 12. 12 4/4 2N3904V revision no : 0 capacitance c (pf) ob 3 1 0.3 0.1 reverse voltage v (v) cb c - v , c - v v - i b base current i (ma) 0.001 0.1 1 10 ce 0 collector-emitter voltage v (v) ce b 0.2 0.4 0.6 0.8 1.0 0.01 common emitter ta=25 c i =1ma c i =10ma c c i =30ma c i =100ma ob cb ib eb c (pf) ib v (v) eb 10 30 0.5 1 3 5 10 30 50 f=1mhz ta=25 c c c ib ob
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